PRODUCTION OF COMPLIMENTARY ISOLATION GATE FIELD EFFECT TRANSISTOR

摘要

PURPOSE:To gain the CMOS-IC in the same production process, whose, threshold voltage of parasitic MOS transistor in the field oxidation membrane region is set independently and the applied voltage is different, by forming the field diffusion layer, having the impurity density which is set in no relation to the substrate, under the field oxidation membrane by ion injection.