| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a planar S-I-S Josephson junction device of sloping structure excellent in junction characteristics by use of a YBCO thin film vertical to a horizontally orientated a-axis and an insulating thin film. SOLUTION: A Josephson tunnel junction device is composed of a substrate 1 where a YBCO thin film as a single crystal buffer layer 2 of perovskite crystal structure formed vertical to a b-axis and as thick as 100nm is deposited and a three-layered junction composed of superconductor-insulator-supercondcutor arnd formed on the substrate 1. In the three-layered junction, a lower electrode 3 and an upper electrode 6 are formed of YBCO superconductive thin film vertical to an a-axis, and a barrier layer 5 is formed of insulating film of thickness 2 to 5nm sandwiched between the two superconductive electrode layers, and a junction 4 has an inclined angle of 30 deg. to 70 deg..
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