发明名称 |
FET semiconductor amplifier - has source drain and gate in SC chip and includes metal strip waveguide |
摘要 |
<p>The strip waveguide is produced on an insulating layer on the chip at such an angle to a line between source and drain, that when a voltage is applied between source and drain, a charge wave runs from source to drain at a velocity approx equal to an electromagnetic wave propagation velocity in the strip waveguide. When the SC chip (3) consists of gallium arsenide or indium phosphate or of an SC material with similar band structure, propagation velocity of the electromagnetic wave is a little higher than that of the charge wave (9) running from source (6) to drain (7).</p> |
申请公布号 |
DE2533175(A1) |
申请公布日期 |
1977.02.10 |
申请号 |
DE19752533175 |
申请日期 |
1975.07.24 |
申请人 |
SIEMENS AG |
发明人 |
DOSSE,JOACHIM,PROF.DR.-ING.HABIL. |
分类号 |
H03F3/16;H03F3/193;H03F3/55;(IPC1-7):03F3/16;03F3/55;01L29/78;03F3/193 |
主分类号 |
H03F3/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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