THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

摘要

A thin film transistor substrate includes: a gate electrode and a first electrode of a capacitor formed above a substrate so as to be arranged along a plane of the substrate; a gate insulating film formed on the gate electrode; a semiconductor layer formed on the gate insulating film; an insulating layer formed on the semiconductor layer and above the first electrode so as to expose portions of the semiconductor layer; a source electrode and a drain electrode formed above the insulating layer so as to be connected to the semiconductor layer at the exposed portions of the semiconductor layer; and a second electrode of the capacitor formed above the insulating layer, at a position opposite the first electrode, and the insulating layer above the gate electrode is thicker than the insulating layer above the first electrode.

主权项

1. A thin film transistor substrate comprising:
a substrate; a gate electrode and a first electrode of a capacitor formed above the substrate, the gate electrode and the first electrode being arranged along a plane of the substrate; a gate insulating film formed on the gate electrode; a semiconductor layer formed on the gate insulating film; an insulating layer formed on the semiconductor layer and above the first electrode, the insulating layer leaving portions of the semiconductor layer exposed; a source electrode and a drain electrode formed above the insulating layer, the source electrode and the drain electrode being connected to the semiconductor layer at the exposed portions of the semiconductor layer; and a second electrode of the capacitor formed above the insulating layer, at a position opposite the first electrode, wherein the insulating layer above the gate electrode is thicker than the insulating layer above the first electrode.