| 摘要 |
<p>PURPOSE:To prevent the generation of a defect in image quality by setting the potential relations of signal lines and Cs electrodes and the wirings thereof in such a manner that the Cs attains the max. capacity region in the capacity- voltage characteristics thereof so that the Cs functions sufficiently. CONSTITUTION:Semiconductor layers 43 consisting of hydrogenated amorphous silicon are formed on the parts facing the gate electrodes 41 and Cs electrodes of a gate insulating film 42 and the wirings 36 thereof. The interlayer insulating characteristic between the Cs electrodes and the wirings thereof as well as display picture element electrodes 33 is improved to lower the generation rate of the dot defect arising from the short circuiting between the electrodes. Namely, the potential relations of the video signal voltages and the Cs electrodes and the wirings 36 thereof are set in such a manner that the Cs maintains the max. capacity region in the capacity-voltage characteristics at all times, by which the defect in the image quality generated by a change in the video signal voltage and a consequent fluctuation in the Cs value or the insufficient Cs value is suppressed.</p> |
