| 摘要 |
PURPOSE:To obtain the titled crystal at high rate of growth even at a low temperature without causing deposition of product on tube wall, by mixing a group III element to a group V element produced by the decomposition with light having a specific wavelength and growing a crystal on a heated part of a substrate. CONSTITUTION:A group V raw material (e.g. AsH3) introduced through a group V raw material inlet 3 at an upstream side of a reaction tube 1 is irradiated and decomposed with light having wavelength sufficient to effect the decomposition of the raw material gas and emitted from an ultra-high pressure mercury lamp 5. The decomposed raw material is mixed with a group III raw material (e.g. triethylgallium) introduced through a group III raw material inlet 4. The mixture is supplied to a substrate 7 on a carbon susceptor 8 which is heated and maintained to a specific temperature with a high-frequency coil 6. A crystal of a III-V compound semiconductor (e.g. GaAs) can be grown on the substrate 7 at a low temperature.
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