发明名称 SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To augment the efficiency of manufacture of a device by a method wherein the positions liable to halation are predicted by the shape of underneath step difference of the device and the thickness of the resist film and taking a countermeasure to avoid said positions or enlarge the pattern dimensions. CONSTITUTION:The dimension of a resist pattern due to halation is varied by the distance between reflecting light path made by the angle of underneath step difference of a device and a pattern. That is, when the angle of step difference is specified, if a pattern is very near the step difference, the pattern dimension is kept unchanged but if they are at a certain distance, the pattern dimension is abruptly decreased and then slowly increased to be kept in a specified dimension at the distance exceeding specified length. Consequently, the position and shape subjected to the halation can be predicted by geometrical calculation. Through these procedures, a device can be manufactured efficiently by forming a design avoiding any positions liable to the halation or enlarging the pattern in said positions.
申请公布号 JPH01246833(A) 申请公布日期 1989.10.02
申请号 JP19880075064 申请日期 1988.03.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUJITA KOICHIRO
分类号 G03F1/00;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F1/00
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