| 摘要 |
A NAND flash memory device for programming selection transistor having electric charge storage layer and a programming method thereof are provided to improve yield and reliability by preventing malfunction of a selection transistor. A cell array(110) comprises a plurality of memory blocks. A block selection circuit(115) is connected between the cell array and a row decoder(120). The row decoder receives an address(ADDR), and selects a word line. A page buffer(130) is connected between the memory cell array and a data input/output circuit(140), stores program data to the cell array, and stores data read from the cell array. The data input/output circuit is connected to page buffers(131-13n) through a data line(DL). A high voltage generation and control circuit(150) controls all operation of a NAND flash memory device, and generates a program voltage, a reading voltage, and a removing voltage.
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