| 摘要 |
PURPOSE:To increase the density of integration of an IC by directly bringing poly Si wirings in an upper layer and a lower layer into contact in multilayer poly Si wiring structure. CONSTITUTION:A first layer poly Si wiring 3 is formed, and an inter-layer insulating film 4 consisting of SiO2, etc., is shaped through a chemical vapor growth method (a CVD method). A resist 5 is applied onto the inter-layer insulating film 4 and an opening is bored to the resist 5 through a photolithographic method, and an opening is bored to the inter-layer insulating film 4 on the first layer poly Si wiring 3, using the resist 5 as a mask. The resist 5 is removed through a method such as ashing by oxygen plasma, and a high melting-point metal 6 such as W is shaped through the CVD method. Second layer poly Si 7 is etched through a dry etching method employing a gas such as CF4, using a resist pattern as a mask, a second layer poly Si wiring is formed, and the resist is gotten rid of. Since the first layer poly Si wiring 3 and the second layer poly Si wiring are conducted through the high melting-point metal 6, the first layer and second layer poly Si wirings can be brought into contact directly, thus increasing the density of integration.
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