PHASE TRANSITION MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a phase transition RAM with a memory cell structure having the advantage of being readily increased in integration and in capacity.

SOLUTION: The phase transition RAM comprises a pair of access transistors having respective drain regions and a phase transition material film electrically connected to a bit line through a first electrode, electrically connected to the drain regions through a pair of second electrodes, and shared by the access transistors.

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