TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IMMUNITY

摘要

A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.

主权项

1. A method of fabricating a semiconductor device, said method comprising:
growing an epitaxial layer over a doped substrate layer, said epitaxial layer and said doped substrate layer both of a first conductivity type, said epitaxial layer comprising a source region and a drain region that are both of a second conductivity type, said epitaxial layer further comprising a body structure of said first conductivity type; forming a gate structure above said epitaxial layer; forming an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said substrate layer and said source region; and forming a first tub region of said first conductivity type under said source region, and adjacent laterally to and in contact with said body structure, wherein said first tub region is in contact with said trench-like feed-through element.