Feldeffekttransistor mit isolierter Steuerelektrode

摘要

1,127,616. Insulated - gate field - effect transistors. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 5 Nov., 1965 [6 Nov., 1964], No. 46987/65. Heading H1K. The source-drain current is not affected until the control voltage reaches a threshold value which is predetermined by the contour of the energy bands at the surface of the region between the source and drain electrodes. As shown, the oxidization of a PNP device in moist oxygen yields an oxide layer 8 and an N + layer 14 which is previously compensated for to a desired extent by an additional diffusion of boron. Alternative methods of adjusting the properties of the source-drain channel include out-diffusion and epitaxial deposition.