发明名称 SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF
摘要 PURPOSE:To form electrodes without necessity of increasing a space at the periphery of a photosensitive drum to be used as an LED array head and without process of flattening, and to suppress peeling of a crystal by providing a second conductivity type crystal region of the shape for enclosing a first conductivity type crystal region on a base having a surface formed of a nonsingle crystalline material, and providing an exposed part on the first conductivity type crystal region. CONSTITUTION:A nonsingle crystalline part is formed on a nonsingle crystalline layer (to provide a nonnucleus forming surface) formed on a heat resistant base 101, and removed except a fine region (the nonnucleus forming surface) 103. Then, after a first conductivity type semiconductor 104 is formed on the base, semiconductor 105 having opposite conductivity type to that of the first conductivity type semiconductor is grown, and an electrode 106 is formed partly on the formed crystalline nucleus surface. Thereafter, part of the single crystal surface grown except the part formed with an electrode is removed, and the formed first conductivity type semiconductor is exposed on the base surface. Thus, the electrode is formed without flattening, and when an LED element is formed, a light is emitted in a direction parallel to a substrate.
申请公布号 JPH04186780(A) 申请公布日期 1992.07.03
申请号 JP19900316256 申请日期 1990.11.20
申请人 CANON INC 发明人 KAWASAKI HIDEJI;TOKUNAGA HIROYUKI
分类号 B41J2/44;B41J2/45;B41J2/455;H01L21/205;H01L33/08;H01L33/16;H01L33/30;H01L33/34;H01L33/40 主分类号 B41J2/44
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