发明名称 Write circuitry for semiconductor RAM with extended service life due to avoid excessive writing, containing flash memory
摘要 Data is written into a flash memory of the semiconductor RAM and verified so that only incorrect data or unsuitable to be written-in are rewritten. The write circuitry comprises an EX-NOR circuit, which compares write with verified data and generates write data according to the comparison. Preferably the EX-NOR circuit comprises numerous EX-NOR circuits, with their number identical to that of write data. Typically the write data are stored in a data buffer, while data read-out for verification are stored in a read-out buffer.
申请公布号 DE19952357(A1) 申请公布日期 2000.05.04
申请号 DE19991052357 申请日期 1999.10.30
申请人 NEC CORP., TOKIO/TOKYO 发明人 MIO, YUICHIRO
分类号 G11C16/02;G11C16/10;(IPC1-7):G11C16/10 主分类号 G11C16/02
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