| 摘要 |
<p>A semiconductor device having a fluorine diffusion barrier layer and a fabricating method are provided to prevent corrosion of a bottom wiring or formation of a void in a low-k dielectric layer by forming the fluorine diffusion barrier layer. A metal pattern(120) is formed on a semiconductor substrate(100), and fluorine diffusion barrier layer(130) doped with nitrogen ion is formed on the metal pattern. An interlayer dielectric containing fluorine is formed on the fluorine diffusion barrier layer. The fluorine diffusion barrier layer has a thickness of 250 to 350 Angstrom. The metal pattern is any one of an aluminum pattern, a tungsten pattern or a copper pattern formed through a damascene process.</p> |
