Method for manufacturing an electrode structure for III-V compound semiconductor element

摘要

A method is disclosed for forming an electrode on a III-V semiconductor element. The resulting electrode has high wire bonding strength, a low ohmic contact resistance, and high reliability, while still being easy to process into desired shapes. The electrode structure is formed by annealing the structure after the formation of a laminated structure having an ohmic layer including at least nickel formed on the III-V compound semiconductor, a bonding layer to be connected to a bonding wire, a stopper layer provided between the ohmic layer and the bonding layer, and an isolation layer provided between the stopper layer and the ohmic layer.