| 摘要 |
A method for forming a bit line of a semiconductor device is provided to improve reliability of a metal line and to improve the yield by preventing the collapse of a tungsten film using a mold insulating layer. A bit line contact plug is formed on a semiconductor substrate(200). A mold insulating layer(203) is formed on the resultant structure. A trench is formed on the resultant structure by etching selectively the mold insulating layer corresponding to a bit line forming region. A contact hole(H) for exposing the bit line contact plug to the outside is formed under the trench by etching selectively the mold insulating layer. A bit line metal film(209) for filling the contact hole and the trench is formed on the resultant structure. An etch back process is performed on the bit line metal film until the mold insulating layer is exposed to the outside.
|
