| 摘要 |
An embodiment relates to a red light emitting device, a method for manufacturing a light emitting device, a light emitting device package and a lighting system. The red light emitting device according to the embodiment comprises: a first conductivity type first semiconductor layer (112); an active layer (114) on the first conductivity type first semiconductor layer (112); a second conductivity type third semiconductor layer (116) on the active layer (114); a second conductivity type fourth semiconductor layer (124) on the second conductivity type third semiconductor layer (116); and a second conductivity type fifth semiconductor layer (125) on the second conductivity type fourth semiconductor layer (124). The second conductivity type fifth semiconductor layer (125) can contain a superlattice structure of a GaP layer (125a)/InxGa(1-x)P layer (here, 0<=x<=1) (125b). |
