SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURING METHOD

摘要

A memory cell of a DRAM that is a semiconductor storage device has a bit line (21a) connected to a bit line plug (20b) and a local wiring (21b) on a first interlayer insulation film (18). The side face of a hard mask (37), an upper barrier metal (36), a Pt film, and a BST film (34) is overlaid with a conductor side wall (40) made of TiAlN. No contact is provided on the Pt film (35) which constitutes an upper electrode (35a), but the upper electrode (35a) is connected to an upper layer wiring (Cu wiring 42) by a conductor side wall (40), dummy lower electrode (33b), a dummy cell plug (30), and a local wiring (21b). Since the Pt film (35) is not exposed to a reductive atmosphere, a capacitor insulation film (34a) is prevented from deteriorating in characteristics.