Two terminal resistive access devices and methods of formation thereof

摘要

In accordance with an embodiment of the present invention, a memory cell includes a two terminal access device disposed above a semiconductor substrate. The access device includes a two terminal resistive switching device having substantially zero retention. The two terminal resistive switching device has a low resistance state and a high resistance state. A memory device is disposed above the semiconductor substrate. The memory device is coupled to the access device.

主权项

1. A switching device comprising:
a memory device disposed over a substrate; and a two terminal access device disposed over the substrate and coupled to the memory device, the two terminal access device comprising a two terminal resistive switching device, wherein the two terminal resistive switching device comprises
an active electrode layer,an inert electrode layer,a switching layer disposed between the active electrode layer and the inert electrode layer, anda tunneling layer disposed between the active electrode layer and the inert electrode layer.