发明名称 WERKWIJZE VOOR HET PRODUCEREN VAN ZINKBORIUM- -SILICAATGLAS VIA CHEMISCHE DAMPAFZETTING ALS- MEDE VOORWERPEN VOORZIEN VAN EEN VOLGENS DEZE WERKWIJZE AFGEZETTE GLASFILM.
摘要 An alkyl compound of zinc is reacted with alkyl compounds or alkoxyl compounds of boron and silicon in the presence of oxygen, thereby to deposit on a substrate zinc borosilicate glass film through a chemical vapor deposition process. The outlet nozzle of a raw material supply conduit for introducing the raw material compounds into a reaction zone is opened in the direction substantially in parallel with a surface of the substrate on which the glass film is to be deposited so that raw materials may be well mixed at the reaction zone. The glass film thus produced has a uniform thickness and a homogeneous composition of the constituents over an area at least of 40 mm extending from the nozzle and is suited for use as protection films for semiconductor devices and dielectric layer for a thin film capacitor on an industrial base.
申请公布号 NL7606079(A) 申请公布日期 1976.12.08
申请号 NL19760006079 申请日期 1976.06.04
申请人 HITACHI LIMITED TE TOKIO. 发明人
分类号 H01L21/768;C03C3/066;C23C16/40;H01B3/08;H01L21/316;H01L21/56;H01L23/29;H01L23/522;(IPC1-7):C03X/;C03C3/12 主分类号 H01L21/768
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