FINE PATTERN FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of forming a first etching mask layer having first strip-shaped patterns (50a) on a material layer (40), forming a second etching mask layer having second strip-shaped patterns (60a) thereon, and etching the material layer (40) exposed through the first and second etching mask layers, thereby using the patterns (50a,60a) as mask to form contact windows (9) by anisotrophic etching. The mask layers are formed as photosenstive material. The method obtains a rectangular contact window to increase the window size.