| 摘要 |
PURPOSE:To increase the speed of operation, and to enable dealing with the microminiaturization by using the laminated films of polysilicide layer, an silicide layer or a polysilicon layer and a high melting-point metal layer as a gate electrode and an emitter electrode, doping an impurity in thigh concentration and employing a doping layer as an emitter diffusion source. CONSTITUTION:A bipolar type transistor section is masked with a resist and a field oxide film 32, and an active base region 34 is formed. An opening 37 for diffusing an emitter is shaped through a patterning, undoped polysilicon is deposited, and the ions of arsenic are implanted to the whole surface of the polysilicon layer. An silicide layer or a high melting-point metallic layer is deposited on the polysilicon layer, and changed into a polycide film through heat treatment while the ions of arsenic as an impurity in the polycide film are equalized. Films having various structure are patterned, gate regions 38, 39 in a MOS transistor and an emitter region 40 in the bipolar type transistor are shaped, the emitter is diffused, and an emitter-base junction in the bipolar type transistor is formed, thus ensuring a high current amplification factor. |
