| 摘要 |
A semiconductor laser having a double hetero junction structure including: an active layer; cladding layers including an upper layer and a lower layer, the cladding layers sandwiching the active layer; and a current blocking layer including a stripe recess for acting as a current passage. The current blocking layer is provided within at least one of the cladding layers. The current blocking layer comprises a plurality of layers, at least one layer of the layers having a slit therein extending transversely to the stripe recess.
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