| 摘要 |
PROBLEM TO BE SOLVED: To heighten the film deposition rate of a dielectric material protective film and to enhance manufacturing capacity of a phase change optical disk by optimizing a material which constitutes the dielectric material protective film protecting a phase change recording layer. SOLUTION: In the phase change optical disk 10, the dielectric material protective films 2 and 4 consisting of a mixed material of ZnS and TiO2, ZnS and Ta2O5 or ZnS and CeO2 and mixtures formed by adding ITO thereto, a recording film 3 and a reflection film 5 are respectively sputtered to a substrate 1. The mixed material containing ITO is capable of direct current sputtering, even though it is a dielectric material. Thus, tact time is reduced. |
