| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon carbide semiconductor device, by which an impurity diffusion layer in which the concentration of a carrier is increased through electrical activation can be formed and a superior ohmic contact can also be formed. SOLUTION: A thin carbon film 2 and a tungsten silicide film 3 are successively laminated over the whole surface of a silicon carbide substrate 1, by using sputtering method or chemical vapor growth method, and, after the tungsten silicide film 3 in a diffusion are a has been removed, aluminum ions 4 are implanted into the substrate 1 from the exposed surface of the carbon film 2. Then the carbon film 2 is removed with an oxygen plasma, by performing annealing at a high temperature of 1,600 deg.C by the induction heating method, and at the same time, an ion beam mixing layer is removed by performing plasma etching.</p> |
