发明名称 Test structures for substrate etching
摘要 A test structure determines the trench depth from etching in a resistive substrate. The test structure has a first contact and a second contact to the substrate. Between the first and second contact is disposed an etch window. A measurement of resistance between the first contact and the second contact is indicative of the depth of etching in the etch window.
申请公布号 US6396076(B1) 申请公布日期 2002.05.28
申请号 US20010934788 申请日期 2001.08.21
申请人 HEWLETT-PACKARD COMPANY 发明人 TOM DENNIS W.
分类号 H01L23/544;(IPC1-7):H01L23/58 主分类号 H01L23/544
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