发明名称 |
SOLID ELECTROLYTE MEMORY DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
<p>A solid electrolyte memory device and a manufacturing method thereof are provided to perform nonvolatile, a high speed operation, and a high integration by using a silver-antimony-tellurium alloy or a copper-antimony-tellurium alloy as a solid electrolyte. In a solid electrolyte memory device, a first electrode layer(106) is formed on a substrate(100). A solid electrolyte layer(128) made of a silver-antimony-tellurium alloy or a copper-antimony-tellurium alloy is included on the first electrode layer. A second electrode layer(132) is formed on the solid electrolyte layer. The silver-antimony-tellurium alloy is made of silver 40~90 atomic%, antimony 5~30 atomic%, and tellurium 5~30 atomic%. The copper-antimony-tellurium alloy is made of copper 40~90 atomic%, antimony 5~30 atomic%, and tellurium 5~30 atomic%.</p> |
申请公布号 |
KR20090029155(A) |
申请公布日期 |
2009.03.20 |
申请号 |
KR20070118530 |
申请日期 |
2007.11.20 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
PARK, YOUNG SAM;LEE, SEUNG YUN;YOON, SUNG MIN;JUNG, SOON WON;YU, BYOUNG GON |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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