| 摘要 |
PURPOSE:The titled device for enabling epitaxial growth having a structure wherein sliders for storing a solution, having plural storing parts to put the growing material solution in them are arranged in plural steps, and commone furnaces for growth are connected in many multiple layers. CONSTITUTION:The semiconductor base plate 53 is arranged on the inner wall face of the lengthwise through hole 52 attached to the supporting stand 51 for the base plate, the top surface of the supporting stand 51 for the base plate is equipped with the first and the second sliders 55 and 57 in two steps respectively slidably, having the storing parts 54a-c and 56a-c with open bottoms to put the growing material solution, and the underside of the supporting stand 51 for the base plate is slidably equipped with the sliders 58 for storing a solution, having the solution receiving reservoir parts 59a-d for storing the material solution after use, at the position not facing the solution storing parts 54a-c. The sliders 55 and 58 are slid in the arrow direction A, or the slider 57 in the arrow direction B properly, and the material solution 60, etc. in the solution storing part 54a, etc. are successively transferred through the through hole 52 to the solution receiving reservoir parts 59a, etc., so that a five fold grown layer is formed easily on the base plate 53. |
