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发明名称
VERTICAL POWER MOSFET HAVING REDUCED SENSITIVITY TO VARIATIONS IN THICKNESS OF EPITAXIAL LAYER
摘要
申请公布号
EP0956596(A1)
申请公布日期
1999.11.17
申请号
EP19970908898
申请日期
1997.03.14
申请人
SILICONIX INCORPORATED
发明人
WILLIAMS, RICHARD, K.
分类号
H01L21/336;H01L29/08;H01L29/78;(IPC1-7):H01L29/76;H01L21/265;H01L21/02
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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