| 摘要 |
A method for forming a contact hole in a semiconductor device is provided to prevent distortion of an opening of the contact hole by using a metal oxide layer as an etching barrier. An interlayer dielectric(24) is formed on a semiconductor substrate(21) with a lower layer, and then a metallic scattered reflection reducing layer(27) is formed on the interlayer dielectric. A photoresist pattern is formed on the scattered reflection reducing layer. The scattered reflection reducing layer is etched by using the photoresist pattern as an etching mask to form a metal oxide layer(29) on the etched side of the scattered reflection reducing layer. The interlayer dielectric is etched by using the photoresist pattern and the metal oxide layer as an etching barrier to form a contact hole(30).
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