| 摘要 |
A dynamic random access memory device is equipped with an internal power supply system for selectively distributing a step-down power voltage to internal component circuits, and the internal power supply system comprises a feedback loop for regulating the step-down power voltage on an internal power supply line to a reference voltage, a voltage detecting circuit monitoring an internal power voltage line to see whether or not the step-down power voltage is decayed to a critical level for producing a gate control signal, and an auxiliary variable load transistor coupled between the external power supply line and the internal power supply line and responsive to the gate control signal for supplementing current to the internal power supply line, wherein the critical level is inversely proportional to the external power voltage while the external power voltage is higher than the reference voltage, thereby preventing the step-down power voltage from undesirable overshoot upon production of the gate control signal.
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