| 摘要 |
In a method of forming an amorphous carbon thin film with a plasma chemical vapor deposition method, at least one of a hydrocarbon gas and a carbon fluoride gas is supplied in a reaction chamber as a material gas. By applying a high voltage between two electrodes, a plasma is generated in the reaction chamber using the supplied material gas. As a result, an amorphous carbon thin film is deposited on a substrate while preventing deposition of an adhesion on an inner wall of the reaction chamber. In order to prevent the adhesion from depositing on the inner wall, at least a part of the inner wall of the reaction chamber is heated to a predetermined temperature or above such that a adhesion coefficient of the adhesion is 0. The predetermined temperature is 200 .degree.C. The reaction chamber is desirably made from a material having a thermal conductivity sufficient to unify a temperature of the whole of the reaction chamber. Alternatively, in order to prevent the adhesion from depositing on the inner wall, a bias voltage such as one of DC bias, a high frequency bias and a high frequency bais imposed on a DC bias is applied to the electrically conductive reaction chamber.
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