| 摘要 |
<p>A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95 % theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from: (a) less than or equal to about 0.001; and (b) greater than or equal to about 0.01. A process for producing a controlled dielectric loss, sintered aluminum nitride body, comprising heat treating an aluminum nitride body at sintering temperatures, including providing a heat treatment atmosphere which effects a selected nitrogen vacancy population in the aluminum nitride body at the sintering temperatures, and cooling the aluminum nitride body from sintering temperatures at a controlled rate and in a cooling atmosphere effective to control the selected nitrogen vacancy population.</p> |
