| 摘要 |
PROBLEM TO BE SOLVED: To manufacture plural semiconductors by providing an exactly defined side area, and/or reducing any crystal damage. SOLUTION: A mask layer 4 is provided on a substrate wafer 19, and the mask layer 4 is provided with plural windows 10. A main surface 9 of the substrate wafer 19 is exposed in the window 10, and a semiconductor layer column 18 is deposited on the main surface 9 of the substrate wafer 19 exposed in the window 10. Thus, a functional semiconductor structure 2 in the same kind is formed in the window 10. Then, a wafer prepared in this way is divided between the semiconductor structures 2 so as to be individualized into semiconductor chips. |
