Semiconductor device comprising a buried poly resistor

摘要

An embedded or buried resistive structure may be formed by amorphizing a semiconductor material and subsequently re-crystallizing the same in a polycrystalline state, thereby providing a high degree of compatibility with conventional polycrystalline resistors, such as polysilicon resistors, while avoiding the deposition of a dedicated polycrystalline material. Hence, polycrystalline resistors may be advantageously combined with sophisticated transistor architectures based on non-silicon gate electrode materials, while also providing high performance of the resistors with respect to the parasitic capacitance.

主权项

1. A method of forming a resistive structure of a semiconductor device, the method comprising:
forming an isolation structure in a semiconductor layer formed on a buried insulating layer, said isolation structure laterally defining a resistor region in said semiconductor layer; forming a transistor in and above a crystalline active region that is positioned in said semiconductor layer; after forming said isolation structure, forming an amorphized semiconductor material in said resistor region; after forming said amorphized semiconductor material in said resistor region, introducing a dopant species into said amorphized semiconductor material to adjust a specific resistance of said resistive structure, wherein said dopant species is introduced when forming drain and source regions of said transistor; and annealing said amorphized semiconductor material to form a polycrystalline semiconductor region.