| 摘要 |
PROBLEM TO BE SOLVED: To enhance the sensistivity of a sensor by providing a conductive material in a substrate of a semiconductor material having high carrier mobility to obtain large resistance. SOLUTION: A Corbino disk sensor is formed by allowing a uniform semiconductor material layer 43 of Hg1 -xCdxTe (0<x<1) or the like to have an inner electrode 41 having a radius (b), an outer electrode 42 having a radius (a) the ring 44 having a notched part 45 and whose radius is (r) and whose thickness is (t) and which is made of In or the alloy of Cr-Au or the like by embeddingly providing in a concentric circular shape. When voltage is applied between the electrodes 41, 42, current is made to flow from the inner electrode 41 to the outer electrode 42 under an external magnetic field orthogonal to the flat surface of the sensor. At this time, the ring 44 performs a barrier action with respect to the current and the current is converged to the current passing through the notched part 45. The resistance of the sensor of this case depends upon a relative dimension t/(a-b) and the notched part 45 and the center angle of the ring 44 with respect to the notched part 45 is made to be 1 deg. to 10 deg. normally. Thus, the resistance can be set to be exteremely large. |
