发明名称 WIRING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a wiring substrate having as an insulating substrate a porcelain which can be sintered at 800 to 1,000 deg.C, has a low dielectric constant in a high-frequency region, a low dielectric loss, a high strength and a thermal expansion coefficient similar to that of a printed substrate, and can be mounted in high reliability. SOLUTION: This wiring substrate comprises an insulating substrate and ball-like terminals disposed on the bottom surface of the insulating substrate. The insulating substrate comprises a porcelain which is obtained by molding a mixture and then sintering the molded article, and has a diopside type oxide crystal phase (DI) as a main crystal phase. The mixture comprises 50 to 95 wt.% of a glass containing SiO2, Al2O3, MgO and CaO and capable of depositing the diopside type oxide crystal phase (DI), 5 to 49.9 wt.% of quartz and/or amorphous silica, and 0.1 to 20 wt.% (converted into MgO) of at least one of MgO, MgCO3, Mg(OH)2 and an Mg-Si complex oxide.
申请公布号 JP2000335959(A) 申请公布日期 2000.12.05
申请号 JP20000115684 申请日期 2000.04.17
申请人 KYOCERA CORP 发明人 TERASHI YOSHITAKE;KAWAI SHINYA
分类号 C04B35/18;C03C10/14;C04B35/00;C04B35/16;C04B35/20;C04B35/495;H01B3/00;H01B3/02;H01B3/08;H01L23/08;H01L23/12;H01L23/15;H05K1/03;H05K3/46 主分类号 C04B35/18
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