| 摘要 |
A method of forming metal lines is disclosed. The method comprises forming a metal layer over a semiconductor substrate. A hard mask layer is then formed over the metal layer. The hard mask layer is then patterned and etched with a pattern corresponding to the desired metal line pattern. Sidewall spacers are then formed on the sidewalls of the hard mask layer. Finally, the metal layer is etched using the hard mask layer and sidewall spacers as a mask.
|
