| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain washing solution with which contaminants such as particles and polymers can be removed efficiently while the damage to a metal film is minimized by a method wherein tetramethyl ammonium hydroxide solution, acetic acid and deionized water are contained. SOLUTION: Tetramethyl ammonium hydroxide solution, acetic acid and deionized water are contained in the washing solution of a semiconductor chip. In this solution, it is recommended to contain 1-50% of acetic acid and deionized water respectively in terms of volume ratios to tetramethyl ammonium hydroxide solution. The recommended concentration of tetramethyl ammonium hydroxide solution is 1-30wt.% and, more preferably, approximately 2.38wt.%. As for the concentration of acetic acid, the recommended concentration is not less than 99.9%. This washing solution is suitable for the washing process of general semiconductor chips and, particularly, suitable for the washing process after a metal wiring layer is formed. With this washing solution, contaminants can be removed efficiently while a metal film is hardly damaged.</p> |
