发明名称 |
SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve the stability of the oscillation of the single lateral mode of an ion implantation type photonic crystalline surface-emitting laser. SOLUTION: A photonic crystalline surface-emitting laser device has a current constriction layer 14 which comprises one or a plurality of layers in an upper DBR mirror 15 and which is formed by ion implantation. A point defect in which a circular hole is not formed is formed on the center of a two-dimensional circular hole arrangement 20. When the width Z of the point defect is set to D, the width of the current opening of a current constriction structure is set to 0.3×D<Z<0.7×D. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008211013(A) |
申请公布日期 |
2008.09.11 |
申请号 |
JP20070046823 |
申请日期 |
2007.02.27 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE |
发明人 |
KISE TOMOFUMI;YOKOUCHI NORIYUKI;PETER NYAKAS |
分类号 |
H01S5/183 |
主分类号 |
H01S5/183 |
代理机构 |
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主权项 |
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地址 |
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