| 摘要 |
The device does not require, for its operation, any substantial lateral switching current. This device comprises three layers (72, 76, 80) of N-type semiconductor material and three layers (74, 78, 82) of P-type semiconductor material in alternation, which form a plurality of P-N junctions. The N-type outer layer (72) is connected to a metal electrode (88) forming a cathode terminal and comprises, within a part of its external surface, a seventh layer (84) which is of P+ type and which is highly doped and is connected to a gate electrode (86). A metal electrode (90) makes contact with the highly doped P-type outer layer (82) in order to form an anode terminal. This device can be formed in a single semiconductor body, along with other circuits. <IMAGE>
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