| 摘要 |
<P>PROBLEM TO BE SOLVED: To apply a high voltage temporarily to the gate of a switching device when the device is turned on or off to enable a mirror period near a threshold voltage to pass away at a high speed so as to turn the device on or off quickly and to enable an adequate bias voltage to be applied to the gate of the device when it is kept on or off. <P>SOLUTION: The high-speed gate drive circuit includes an on-holding power supply 1 whose voltage is within a rated gate voltage, a turn-on booster circuit for generating the voltage exceeding the rated gate voltage from the on-holding power supply 1, and a turn-on capacitor 6 to be charged by the turn-on booster circuit. The turn-on capacitor 6 is boosted and charged by the turn-on booster circuit by the time immediately before the turn-on, the charges of the capacitor are applied to the gate of a semiconductor switching element to perform the turn-on at a high speed, and an on state is held by the on-holding power supply 1 after the turn-off. <P>COPYRIGHT: (C)2008,JPO&INPIT |
