Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device

摘要

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.

主权项

1. A photoelectric conversion device, comprising:
a first semiconductor substrate which includes a photoelectric conversion unit where a plurality of photoelectric conversion elements are arranged; a second semiconductor substrate which includes a signal processing unit for processing an electrical signal on basis of a signal charge generated in the photoelectric conversion unit, the second semiconductor substrate having a first surface where a plurality of transistors which constitutes the signal processing unit and a second surface opposite to the first surface; and a lens array arranged on the first semiconductor substrate, wherein the first semiconductor substrate and the second semiconductor substrate are stacked on each other, and at least a part of the signal processing unit being situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate, and wherein a distance between the first surface of the second semiconductor substrate and the second surface of the second semiconductor substrate is greater than a distance between the first surface of the second semiconductor substrate and a light input surface of the lens array.