| 发明名称 | Electrostatic chuck mechanism and charged particle beam apparatus | ||
| 摘要 | Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample. | ||
| 申请公布号 | US9401297(B2) | 申请公布日期 | 2016.07.26 |
| 申请号 | US201514626116 | 申请日期 | 2015.02.19 |
| 申请人 | Hitachi High-Technologies Corporation | 发明人 | Ebizuka Yasushi;Kanno Seiichiro;Yasukochi Masaya;Takahashi Masakazu;Ishigaki Naoya;Miya Go |
| 分类号 | H01J37/20;H01L21/683;H01J37/28;H01J37/244 | 主分类号 | H01J37/20 |
| 代理机构 | Crowell & Moring LLP | 代理人 | Crowell & Moring LLP |
| 主权项 | 1. An electrostatic chuck mechanism comprising: a first plane that is a plane of a side in which a sample is adsorbed; a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied; and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the electrostatic chuck mechanism is formed so that a size in an insulating plane direction of the electrostatic chuck mechanism is smaller than that of the sample for avoiding positioning the insulating plane of the electrostatic chuck mechanism on the virtual line between the edge and a surface of the second electrode. | ||
| 地址 | Tokyo JP | ||