发明名称 Focused ion beam apparatus and control method thereof
摘要 A focused ion beam apparatus has an emitter for emitting an ion beam, an ion source chamber accommodating the emitter, a cooling unit and a heating unit for cooling and heating, respectively, the emitter, and an ion source gas supply section for supplying to the ion source chamber an ion source gas that is exchangeable with another ion source gas. A control section controls an operation of the cooling unit such that a temperature of a wall surface contacting the ion source gas in the ion source chamber is maintained at a temperature higher than a temperature at which the ion source gas before and after the exchange freezes. The control section controls an operation of the heater so that the emitter is temporarily heated to release the ion source gas from a surface of the emitter before the ion source gas is exchanged with the other ion source gas.
申请公布号 US9418817(B2) 申请公布日期 2016.08.16
申请号 US201414218020 申请日期 2014.03.18
申请人 HITACHI HIGH-TECH SCIENCE CORPORATION 发明人 Aramaki Fumio;Sugiyama Yasuhiko;Oba Hiroshi
分类号 H01J37/08 主分类号 H01J37/08
代理机构 Adams & Wilks 代理人 Adams & Wilks
主权项 1. A focused ion beam apparatus comprising: an emitter configured to emit an ion beam; an ion source chamber that accommodates the emitter and is supplied with a source gas; a cooling unit, which is connected to the ion source chamber by a connecting section, and which is configured to cool the emitter by cooling the connecting section and a wall portion of the ion source chamber; an ion source gas supply section configured to supply an ion source gas to the ion source chamber, the ion source gas that is supplied to the ion source chamber being exchangeable with another ion source gas that is supplied by the ion source gas supply section; and a control section configured to control operation of the focused ion beam apparatus; wherein the control section comprises a temperature control section configured to control an operation of the cooling unit such that a temperature of a wall surface contacting the ion source gas in the ion source chamber is maintained at a temperature higher than a temperature at which each of the ion source gases before and after the exchange freezes.
地址 JP