| 摘要 |
PURPOSE:To accurately form small gate input voltage through as required by a method wherein a Josephson junction is built in at least part of a gate region. CONSTITUTION:The two-state transition function of the state of zero voltage and the state of voltage which Josephson junction elements J.J have is grasped as a selective voltage step generation means, and this function is combined with a device Var-DPIGFED where the potential distribution of the gate region is not uniform, but an arbitrary, desired potential distribution or a desired voltage drop distribution can be set variably. In J.J. arrays shown by Figs. A and B, if all the J.J's are under transition to the state of voltage, stepwise voltage steps as shown in Fig. C are formed. One of applications of such stepwise voltage steps is: since both end potentials of the series J.J. array construction are (n) times the case of a piece of J.J., a factor of (n) pieces, the voltage thereof nXDELTAVg is used as voltage pulses. The voltage of a left side junction J1 in contact with a superconductor becomes (n)XDELTAVg in such a case, and thereby an MOS transistor shown in the Figure can be driven. |
