发明名称 |
METHOD FOR REPAIRING HALFTONE DEFECT IN BINARY MASK |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To repair a halftone defect causing imperfect light shielding in a binary mask with high accuracy and excellent transfer properties. <P>SOLUTION: The following phenomenon is utilized; an FIB-CVD light shielding film 8 with little halo does not grow on a gallium implanted chromium film but can grow on a glass part 6 exposed by etching. Part of the halftone defect 2 in the binary mask to which the FIB-CVD light shielding film 8 is made less attachable by implantation of gallium of focused ion beams 1 is shaved up to a glass substrate by gas assisted etching. The FIB-CVD light shielding film 8 is then grown from the exposed glass part 6 to repair the halftone defect. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005234047(A) |
申请公布日期 |
2005.09.02 |
申请号 |
JP20040040346 |
申请日期 |
2004.02.17 |
申请人 |
SII NANOTECHNOLOGY INC |
发明人 |
KOSAKAI TOMOKAZU;TAKAOKA OSAMU |
分类号 |
G03F1/72;G03F1/74;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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