| 摘要 |
PURPOSE:To enable lithography high in resolution and accurate in registration, by adding an azide compd. as a photosensitive agent, raising absorption of light of specified wavelengths, enabling use of a resist having an effectively thin photosensitive layer, and avoiding the adverse effect of the stationary waves in the contraction projection exposure method. CONSTITUTION:The material to be processed is coated with a photoresist contg. as a photosensitive agent an azide compd. intensely absorbing light of 300- 380nm wavelength to form a photoresist film, and its desired parts are projected and exposed to decrease the solubility of the exposed parts. The azide compd. is selected from a group of 4-azidochalkone, 4-azido-4'-methoxy-chalkone, 2,6-di (4'-azidobenzal)-4-methylcyclohexanone, and 4-azido-cinnamylideneacetophenone. The photoresist includes a polymer selected from a p-vinylphenol and novolak resin. The light of nearly 365nm wavelengths is used for projection exposure. |
