发明名称 |
Vertical trench gate transistor semiconductor device and method for fabricating the same |
摘要 |
A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.
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申请公布号 |
US2006124996(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20050297406 |
申请日期 |
2005.12.09 |
申请人 |
MIZOKUCHI SHUJI;TSUNODA KAZUAKI |
发明人 |
MIZOKUCHI SHUJI;TSUNODA KAZUAKI |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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